• Molecular dynamics study of stress relaxation during Ge deposition on Si(100) 2×1 substrates 

  Martín Encinar, Luis; Marqués Cuesta, Luis Alberto; Aboy Cebrián, María; López Martín, Pedro; Santos Tejido, Iván; Pelaz Montes, María Lourdes (2023)
• First principles characterization of PnVm clusters in crystalline silicon 

  Santos Tejido, Iván; Aboy Cebrián, María; López Martín, Pedro; Marqués Cuesta, Luis Alberto; Martín Encinar, Luis; Pelaz Montes, María Lourdes (2023)
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  Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential 

  Martín Encinar, Luis; Santos Tejido, Iván; López Martín, Pedro; Marqués Cuesta, Luis Alberto; Aboy Cebrián, María; Pelaz Montes, María Lourdes (2019)
• 

  IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions 

  López Martín, Pedro; Aboy Cebrián, María; Muñoz, I.; Santos Tejido, Iván; Marqués Cuesta, Luis Alberto; Couso, Carlos; Ullán, Miguel; Pelaz Montes, María Lourdes (2019)
• 

  Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion 

  Santos Tejido, Iván; Aboy Cebrián, María; Marqués Cuesta, Luis Alberto; López Martín, Pedro; Ruiz Prieto, Manuel; Pelaz Montes, María Lourdes; Hernández Díaz, A.M.; Castrillo, P. (2016)

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