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    Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/68504

    Título
    Advanced characterization of 1 eV GaInAs inverted metamorphic solar cells
    Autor
    Galiana, Beatriz
    Navarro, Amalia
    Hinojosa, Manuel
    García, Iván
    Martin Martin, Diego
    Jiménez López, Juan IgnacioAutoridad UVA Orcid
    García Tabarés, Elisa
    Año del Documento
    2023
    Editorial
    MDPI
    Descripción
    Producción Científica
    Documento Fuente
    Energies, 2023, Vol. 16, Nº. 14, 5367
    Résumé
    In this work, 1 eV Ga0.7In0.3As inverted metamorphic (IMM) solar cells were analyzed to achieve a deeper understanding of the mechanism limiting their improvement. For this purpose, high-resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), high-resolution cross-sectional cathodoluminescence (CL), and transient in situ surface reflectance were carried out. Additionally, the photovoltaic responses of the complete devices were measured using the external quantum efficiency (EQE) and numerically simulated through Silvaco TCAD ATLAS. The combination of structural characterization of the semiconductor layers and measurements of the solar cell photovoltaic behavior, together with device modeling, allows us to conclude that the lifetime of the bulk minority carriers is the limiting factor influencing the PV response since the recombination at the interfaces (GaInP window–GaInAs emitter and GaInAs base–GaInP back surface field (BSF)) does not impact the carrier recombination due to the favorable alignment between the conduction and the valance bands. The advanced characterization using cross-sectional cathodoluminescence, together with transient in situ surface reflectance, allowed the rejection of the formation of traps related to the GaInAs growth conditions as being responsible for the decrement in the minority-carrier lifetime. Conversely, the TEM and HRXRD revealed that the presence of misfit dislocations in the GaInAs layer linked to strain relaxation, which were probably formed due to an excessive tensile strain in the virtual substrate or an incorrect combination of alloy compositions in the topmost layers, was the dominant factor influencing the GaInAs layer’s quality. These results allow an understanding of the contributions of each characterization technique in the analysis of multi-junction solar cells.
    Materias (normalizadas)
    Solar cells
    Células solares
    Solar energy
    Semiconductores
    Photovoltaic power generation
    Energía fotovoltaica
    Semiconductors
    Transmission electron microscopy
    Microscopio electrónico
    Cathodoluminescence
    Materias Unesco
    2106.01 Energía Solar
    2211.25 Semiconductores
    2203.04 Microscopia Electrónica
    ISSN
    1996-1073
    Revisión por pares
    SI
    DOI
    10.3390/en16145367
    Patrocinador
    Ministerio de Ciencia, Innovación y Universidades/Agencia Estatal de Investigación (AEI) y Fondo Europeo de Desarrollo Regional (FEDER) - (project EQC2019- 005701-P)
    Ministerio de Ciencia, Innovación y Universidades/Agencia Estatal de Investigación (AEI) y Unión Europea NextGenerationEU/PRTR - (project EQC2021-006851-P)
    Version del Editor
    https://www.mdpi.com/1996-1073/16/14/5367
    Propietario de los Derechos
    © 2023 The authors
    Idioma
    eng
    URI
    https://uvadoc.uva.es/handle/10324/68504
    Tipo de versión
    info:eu-repo/semantics/publishedVersion
    Derechos
    openAccess
    Aparece en las colecciones
    • DEP32 - Artículos de revista [284]
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    Nombre:
    Advanced-Characterization.pdf
    Tamaño:
    2.561Mo
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    Atribución 4.0 InternacionalExcepté là où spécifié autrement, la license de ce document est décrite en tant que Atribución 4.0 Internacional

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