En este trabajo se realiza un estudio de memorias RRAM conocidas comúnmente como memristores. Para comprender la
evolución y la importancia de dichas memorias emergentes se realiza un previo análisis del contexto histórico para estas memorias, del descubrimiento
del memristor y de su relevancia en la actual era del silicio. Se trata de un trabajo experimental en el que se pretende estudiar y comprender el
funcionamiento interno de estas memorias. Para ello se realizan medidas de las curvas I-V, mapas de memoria o histerones de su capacidad y
conductancia y por último se estudia su comportamiento transitorio.
In this work, an experimental study of RRAM memories, commonly referred to as memristors, is realized. To fully comprehend the development and significance of said emerging memories, first a historical context analysis is conducted as well as a review of
the discovery of the memristor and its relevance in the actual silicon era. This experimental study aims to discern the internal workings of said memories. To achieve this,
measurements of the I-V curves and memory maps or hysterons of their conductance
and capacity were conducted. Finally, its transient response was studied.
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