Sfoglia per Autore "Vinuesa Sanz, Guillermo"

Items 1-20 di 35

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

Maldonado, D; Vinuesa Sanz, Guillermo ; Aldana, S; Aguirre, F.L.; Cantudo, A; García García, Héctor ; González, M. B.; Jiménez Molinos, Francisco; Campabadal Segura, Francesca; Miranda, E.; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Roldán, J.B. (2024)
An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

Maldonado, D.; Aguilera-Pedregosa, C.; Vinuesa Sanz, Guillermo ; García García, Héctor ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Aldana, S.; González, M.B.; Moreno, E.; Jiménez-Molinos, F.; Campabadal, F.; Roldán, J.B. (2022)
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

González Ossorio, Óscar ; Vinuesa Sanz, Guillermo ; García García, Héctor ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna; Kukli, Kaupo (2021)
Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Kalam, Kristjan; Rammula, Raul; Ritslaid, Peeter; Käämbre, Tanel; Link, Joosep; Stern, Raivo; Vinuesa Sanz, Guillermo ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Tamm, Aile; Kukli, Kaupo (2021)
Double swing quiescent-current: An experimental detection method of ferroelectricity in very leaky dielectric films

Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; González Ossorio, Óscar ; Vinuesa Sanz, Guillermo ; García García, Héctor ; Kukli, Kaupo; Leskelä, Markku (2020)
Effect of dielectric thickness on resistive switching polarity in TiN/Ti/HfO2/Pt stacks

Vinuesa Sanz, Guillermo ; García García, Héctor ; Bargalló González, Mireia; Kalam, Kristjan; Zabala, Miguel; Tarre, Aivar; Kukli, Kaupo; Tamm, Aile; Campabadal Segura, Francesca; Jiménez López, Juan Ignacio ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador (2022)
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Vinuesa Sanz, Guillermo ; González Ossorio, Óscar ; García García, Héctor ; Sahelices Fernández, Benjamín ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Kukli, Kaupo; Kull, M; Tarre, Aivar; Jõgiaas, Taivo; Tamm, Aile; Kasikov, Aarne (2021)
Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

Aguirre, F L; González, M B; Jiménez-Molinos, Francisco; Campabadal, F; Roldán, J B; Miranda, E; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; García García, Héctor ; García-Ochoa, E.; Vinuesa Sanz, Guillermo (2023)
Estructura electrónica y propiedades magnéticas de nanoaleaciones de FeNi

Vinuesa Sanz, Guillermo (2018)
Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

Vinuesa Sanz, Guillermo (2022)
Estudio de la Termodinámica de mecanismos de SET y RESET en memristores de conmutación resistiva

Val de la Fuente, Teresa del (2025)
Estudio de los mecanismos de conducción presentes en estructuras RRAM de óxido de hafnio

Boo Alvarez, Jonathan (2024)
Estudio experimental de dispositivos de conmutación resistiva

Sarmentero González, Ana (2024)
Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media

Kahro, Tauno; Tarre, Aivar; Käämbre, Tanel; Piirsoo, Helle-Mai; Kozlova, Jekaterina; Ritslaid, Peeter; Kasikov, Aarne; Jõgiaas, Taivo; Vinuesa Sanz, Guillermo ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Tamm, Aile; Kukli, Kaupo (2021)
Impact of the temperature on the conductive filament morphology in HfO2-based RRAM

Vinuesa Sanz, Guillermo ; García García, Héctor ; Poblador, Samuel; González, Mireia B; Campabadal, Francesca; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador (2024)
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

García García, Héctor ; Boo Alvarez, Jonathan; Vinuesa Sanz, Guillermo ; González Ossorio, Óscar ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)
Inhomogeneous HfO2 layer growth at atomic layer deposition

Kasikov, Aarne; Tarre, Aivar; Vinuesa Sanz, Guillermo (2023)
Memory effects in nanolaminates of hafnium and iron oxide films structured by atomic layer deposition

Kalam, Kristjan; Otsus, Markus; Kozlova, Jekaterina; Tarre, Aivar; Kasikov, Aarne; Rammula, Raul; Link, Joosep; Stern, Raivo; Vinuesa Sanz, Guillermo ; Lendínez Sánchez, José Miguel; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Tamm, Aile; Kukli, Kaupo (2022)
Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures

Lamela, Adrián; González Ossorio, Óscar ; Vinuesa Sanz, Guillermo ; Sahelices Fernández, Benjamín (2021)
On the asymmetry of resistive switching transitions

Vinuesa Sanz, Guillermo ; García García, Héctor ; Pérez, Eduardo; Wenger, Christian; Íñiguez de la Torre, Ignacio; González, Tomás; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena (2024)

Sfoglia per Autore "Vinuesa Sanz, Guillermo" Google Citations

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories ﻿

An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices ﻿

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications ﻿

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone ﻿

Double swing quiescent-current: An experimental detection method of ferroelectricity in very leaky dielectric films ﻿

Effect of dielectric thickness on resistive switching polarity in TiN/Ti/HfO2/Pt stacks ﻿

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices ﻿

Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices ﻿

Estructura electrónica y propiedades magnéticas de nanoaleaciones de FeNi ﻿

Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM ﻿

Estudio de la Termodinámica de mecanismos de SET y RESET en memristores de conmutación resistiva ﻿

Estudio de los mecanismos de conducción presentes en estructuras RRAM de óxido de hafnio ﻿

Estudio experimental de dispositivos de conmutación resistiva ﻿

Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media ﻿

Impact of the temperature on the conductive filament morphology in HfO2-based RRAM ﻿

Influences of the temperature on the electrical properties of HfO2-based resistive switching devices ﻿

Inhomogeneous HfO2 layer growth at atomic layer deposition ﻿

Memory effects in nanolaminates of hafnium and iron oxide films structured by atomic layer deposition ﻿

Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures ﻿

On the asymmetry of resistive switching transitions ﻿

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Double swing quiescent-current: An experimental detection method of ferroelectricity in very leaky dielectric films

Effect of dielectric thickness on resistive switching polarity in TiN/Ti/HfO2/Pt stacks

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

Estructura electrónica y propiedades magnéticas de nanoaleaciones de FeNi

Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

Estudio de la Termodinámica de mecanismos de SET y RESET en memristores de conmutación resistiva

Estudio de los mecanismos de conducción presentes en estructuras RRAM de óxido de hafnio

Estudio experimental de dispositivos de conmutación resistiva

Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media

Impact of the temperature on the conductive filament morphology in HfO2-based RRAM

Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

Inhomogeneous HfO2 layer growth at atomic layer deposition

Memory effects in nanolaminates of hafnium and iron oxide films structured by atomic layer deposition

Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures

On the asymmetry of resistive switching transitions