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    Por favor, use este identificador para citar o enlazar este ítem:http://uvadoc.uva.es/handle/10324/46600

    Título
    Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media
    Autor
    Kahro, Tauno
    Tarre, Aivar
    Käämbre, Tanel
    Piirsoo, Helle-Mai
    Kozlova, Jekaterina
    Ritslaid, Peeter
    Kasikov, Aarne
    Jõgiaas, Taivo
    Vinuesa Sanz, GuillermoAutoridad UVA Orcid
    Dueñas Carazo, SalvadorAutoridad UVA Orcid
    Castán Lanaspa, María HelenaAutoridad UVA Orcid
    Tamm, Aile
    Kukli, Kaupo
    Año del Documento
    2021
    Editorial
    ACS Publications
    Descripción
    Producción Científica
    Documento Fuente
    ACS Applied Nano Materials, 2021. In press. 12 p.
    Abstract
    Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregrown on the Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 was used as the metal precursor for the bottom layer. The O2 plasma-assisted process was applied for growing HfO2 from Hf[N(CH3)(C2H5)]4 also on the top of graphene. To improve graphene transfer, the effects of the surface pretreatments of the as-grown and aged Si/TiN/HfO2 substrates were studied and compared. The graphene layer retained its integrity after the plasma processes. Studies on resistive switching on HfO2-graphene-HfO2 nanostructures revealed that the operational voltage ranges in the graphene-HfO2 stacks were modified together with the ratios between high- and low-resistance states.
    Palabras Clave
    Graphene
    Grafeno
    Atomic layer deposition
    Deposición atómica de capas
    Hafnium oxide
    Óxido de hafnio
    Stacked nanostructures
    Nanoestructuras apiladas
    ISSN
    2574-0970
    Revisión por pares
    SI
    DOI
    10.1021/acsanm.1c00587
    Patrocinador
    Fondo Europeo de Desarrollo Regional (projects TK134 and TK141)
    Ministerio de Economía, Industria y Competitividad (project TEC2017-84321-C4-2-R)
    Estonian Research Agency (projects PRG4 and PRG753)
    Version del Editor
    https://pubs.acs.org/doi/10.1021/acsanm.1c00587
    Propietario de los Derechos
    © 2021 ACS Publications
    Idioma
    eng
    URI
    http://uvadoc.uva.es/handle/10324/46600
    Tipo de versión
    info:eu-repo/semantics/acceptedVersion
    Derechos
    openAccess
    Aparece en las colecciones
    • GCME - Artículos de revista [57]
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    Attribution-NonCommercial-NoDerivatives 4.0 InternacionalLa licencia del ítem se describe como Attribution-NonCommercial-NoDerivatives 4.0 Internacional

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