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  Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge 

  García García, Héctor; Vinuesa Sanz, Guillermo; González Ossorio, Óscar; Sahelices Fernández, Benjamín; Castán Lanaspa, María Helena; Dueñas Carazo, Salvador; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)
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  Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications 

  González Ossorio, Óscar; Vinuesa Sanz, Guillermo; García García, Héctor; Sahelices Fernández, Benjamín; Dueñas Carazo, Salvador; Castán Lanaspa, María Helena; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna; Kukli, Kaupo (2021)
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  Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices 

  Vinuesa Sanz, Guillermo; González Ossorio, Óscar; García García, Héctor; Sahelices Fernández, Benjamín; Castán Lanaspa, María Helena; Dueñas Carazo, Salvador; Kukli, Kaupo; Kull, M; Tarre, Aivar; Jõgiaas, Taivo; Tamm, Aile; Kasikov, Aarne (2021)
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  Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications 

  Vinuesa Sanz, Guillermo; Marín, Pelayo; González Ossorio, Óscar; Sahelices Fernández, Benjamín; García García, Héctor; Castán Lanaspa, María Helena; Dueñas Carazo, Salvador (2021)
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  Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications 

  González Ossorio, Óscar; Vinuesa Sanz, Guillermo; García García, Héctor; Sahelices Fernández, Benjamín; Dueñas Carazo, Salvador; Castán Lanaspa, María Helena; Pérez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Wenger, Christian (2021)

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