Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Vinuesa Sanz, Guillermo; González Ossorio, Óscar; García García, Héctor; Sahelices Fernández, Benjamín; Castán Lanaspa, María Helena; Dueñas Carazo, Salvador; Kukli, Kaupo; Kull, M; Tarre, Aivar; Jõgiaas, Taivo; Tamm, Aile; Kasikov, Aarne

doi:10.1016/j.sse.2021.108085

Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/48633

Título

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Año del Documento

2021

Editorial

Elsevier

Descripción

Producción Científica

Documento Fuente

Solid-State Electronics, 2021, vol. 183, p.108085

Resumen

Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences of electrical behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between the Resistive Switching properties of the samples is proposed, based on the distribution of HfAlOx layers of the sample. Dependence of the RS properties of the samples on their growth temperature is discussed.

Materias Unesco

22 Física

33 Ciencias Tecnológicas

Palabras Clave

RRAM

Hafnium oxide

Aluminium oxide

Hafnium-aluminum oxide

ISSN

0038-1101

Revisión por pares

DOI

10.1016/j.sse.2021.108085

Patrocinador

Ministerio de Ciencia, Innovación y Universidades con el apoyo de fondos Feder (grant TEC2017-84321-C4-2-R)
Fondo Europeo de Desarrollo Regional "Pedidos emergentes en cuanto a cuántica y nanomateriales" (TK134)
Estonian Research Agency (PRG753)

Version del Editor

https://www.sciencedirect.com/science/article/pii/S0038110121001301