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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
dc.contributor.authorVinuesa Sanz, Guillermo
dc.contributor.authorGonzález Ossorio, Óscar 
dc.contributor.authorGarcía García, Héctor 
dc.contributor.authorSahelices Fernández, Benjamín 
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorDueñas Carazo, Salvador 
dc.contributor.authorKukli, Kaupo
dc.contributor.authorKull, M
dc.contributor.authorTarre, Aivar
dc.contributor.authorJõgiaas, Taivo
dc.contributor.authorTamm, Aile
dc.contributor.authorKasikov, Aarne
dc.date.accessioned2021-09-10T10:26:49Z
dc.date.available2021-09-10T10:26:49Z
dc.date.issued2021
dc.identifier.citationSolid-State Electronics, 2021, vol. 183, p.108085es
dc.identifier.issn0038-1101es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/48633
dc.descriptionProducción Científicaes
dc.description.abstractResistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences of electrical behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between the Resistive Switching properties of the samples is proposed, based on the distribution of HfAlOx layers of the sample. Dependence of the RS properties of the samples on their growth temperature is discussed.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherElsevieres
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subject.classificationRRAMes
dc.subject.classificationHafnium oxidees
dc.subject.classificationAluminium oxidees
dc.subject.classificationHafnium-aluminum oxidees
dc.titleEffective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM deviceses
dc.typeinfo:eu-repo/semantics/articlees
dc.rights.holder© 2021 Elsevieres
dc.identifier.doi10.1016/j.sse.2021.108085es
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S0038110121001301es
dc.identifier.publicationfirstpage108085es
dc.identifier.publicationtitleSolid-State Electronicses
dc.identifier.publicationvolume183es
dc.peerreviewedSIes
dc.description.projectMinisterio de Ciencia, Innovación y Universidades con el apoyo de fondos Feder (grant TEC2017-84321-C4-2-R)es
dc.description.projectFondo Europeo de Desarrollo Regional "Pedidos emergentes en cuanto a cuántica y nanomateriales" (TK134)es
dc.description.projectEstonian Research Agency (PRG753)es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.type.hasVersioninfo:eu-repo/semantics/acceptedVersiones
dc.subject.unesco22 Físicaes
dc.subject.unesco33 Ciencias Tecnológicases


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