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Título
Light-Induced Reorientation Transition in an Antiferromagnetic Semiconductor
Autor
Año del Documento
2025
Editorial
American Physical Society
Descripción
Producción Científica
Documento Fuente
Phys. Rev. X, febrero 2025, vol. 15
Resumen
Because of the lack of a net magnetic moment, antiferromagnets possess a unique robustness to external magnetic fields and are thus predicted to play an important role in future magnetic technologies. However, this robustness also makes them quite difficult to control, and the development of novel methods to manipulate these systems with external stimuli is a fundamental goal of antiferromagnetic spintronics. In this work, we report evidence for a metastable reorientation of the order parameter in an antiferromagnetic semiconductor triggered by an ultrafast quench of the equilibrium order via photoexcitation above the band gap. The metastable state forms less than 10 ps after the excitation pulse, and persists for longer than 150 ps before decaying to the ground state via thermal fluctuations. Importantly, this transition cannot be induced thermodynamically, and requires the system to be driven out of equilibrium. Broadly speaking, this phenomenology is ultimately the result of large magnetoelastic coupling in combination with a relatively low symmetry of the magnetic ground state. Since neither of these properties are particularly uncommon in magnetic materials, the observations presented here imply a generic path toward novel device technology enabled by ultrafast dynamics in antiferromagnets.
Palabras Clave
DFT, magnetism
ISSN
2160-3308
Revisión por pares
SI
Patrocinador
Ministerio de Ciencia e Innovación
European Regional Development Fund (Grant No. FIS2011-22957)
Basque Government
European Regional Development Fund (Grant No. FIS2011-22957)
Basque Government
Version del Editor
Propietario de los Derechos
©2026 American Physical Society
Idioma
spa
Tipo de versión
info:eu-repo/semantics/publishedVersion
Derechos
openAccess
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