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    Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/82703

    Título
    Light-Induced Reorientation Transition in an Antiferromagnetic Semiconductor
    Autor
    Fichera, Bryan T.
    Lv, Baiqing
    Morey, Karna
    Shen, Zongqi
    Lee, Changmin
    Donoway, Elizabeth
    Liebman-Peláez, Alex
    Kogar, Anshul
    Kurumaji, Takashi
    Rodriguez-Vega, Martin
    del Toro, Rodrigo Humberto Aguilera
    Arruabarrena, Mikel
    Ilyas, Batyr
    Luo, Tianchuang
    Müller, Peter
    Leonardo, Aritz
    Ayuela, Andres
    Fiete, Gregory A.
    Checkelsky, Joseph G.
    Orenstein, Joseph
    Gedik, Nuh
    Año del Documento
    2025
    Editorial
    American Physical Society
    Descripción
    Producción Científica
    Documento Fuente
    Phys. Rev. X, febrero 2025, vol. 15
    Résumé
    Because of the lack of a net magnetic moment, antiferromagnets possess a unique robustness to external magnetic fields and are thus predicted to play an important role in future magnetic technologies. However, this robustness also makes them quite difficult to control, and the development of novel methods to manipulate these systems with external stimuli is a fundamental goal of antiferromagnetic spintronics. In this work, we report evidence for a metastable reorientation of the order parameter in an antiferromagnetic semiconductor triggered by an ultrafast quench of the equilibrium order via photoexcitation above the band gap. The metastable state forms less than 10 ps after the excitation pulse, and persists for longer than 150 ps before decaying to the ground state via thermal fluctuations. Importantly, this transition cannot be induced thermodynamically, and requires the system to be driven out of equilibrium. Broadly speaking, this phenomenology is ultimately the result of large magnetoelastic coupling in combination with a relatively low symmetry of the magnetic ground state. Since neither of these properties are particularly uncommon in magnetic materials, the observations presented here imply a generic path toward novel device technology enabled by ultrafast dynamics in antiferromagnets.
    Palabras Clave
    DFT, magnetism
    ISSN
    2160-3308
    Revisión por pares
    SI
    DOI
    10.1103/PhysRevX.15.011044
    Patrocinador
    Ministerio de Ciencia e Innovación
    European Regional Development Fund (Grant No. FIS2011-22957)
    Basque Government
    Version del Editor
    https://journals.aps.org/prx/abstract/10.1103/PhysRevX.15.011044
    Propietario de los Derechos
    ©2026 American Physical Society
    Idioma
    spa
    URI
    https://uvadoc.uva.es/handle/10324/82703
    Tipo de versión
    info:eu-repo/semantics/publishedVersion
    Derechos
    openAccess
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    • DEP33 - Artículos de revista [256]
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    2025-physical-review.pdf
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