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Por favor, use este identificador para citar o enlazar este ítem: http://uvadoc.uva.es/handle/10324/31321
Título: Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells
Autor: Sánchez, L.A.
Moretón Fernández, Ángel
Guada, M.
Rodríguez Conde, S.
Martínez Sacristán, Óscar
González Rebollo, Miguel Angel
Jiménez López, Juan
Serie: Topical Collection: 17th Conference on Defects (DRIP XVII)
Año del Documento: 2018
Editorial: Springer
Documento Fuente: Journal of Electronic Materials, 2018, Volume 47, Issue 9, pp 5077–5082
Resumen: Today’s photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electrical activity of defects in mc-Si solar cells. In this work, upgraded metallurgical grade Si solar cells are studied using these two techniques.
Palabras Clave: Solar cells multicrystalline silicon
UMG silicon
LBIC
ISSN: 0361-5235
DOI: https://doi.org/10.1007/s11664-018-6381-8
https://doi.org/10.1007/s11664-018-6381-8
Patrocinador: Ministerio de Economía, Industria y Competitividad (ENE2014-56069-C4-4-R)
Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. Project VA081U16)
Version del Editor: https://link.springer.com/article/10.1007/s11664-018-6381-8
Idioma: eng
URI: http://uvadoc.uva.es/handle/10324/31321
Derechos: info:eu-repo/semantics/openAccess
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