Skip navigation
Por favor, use este identificador para citar o enlazar este ítem: http://uvadoc.uva.es/handle/10324/31326
Título: Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
Autor: Navarro, A.
Martínez Sacristán, Óscar
Galiana, B.
Lombardero, I.
Ochoa, M.
García, I.
Gabás, M.
Ballesteros, Carmen
Jiménez López, Juan
Algora, C.
Serie: Topical Collection: 17th Conference on Defects (DRIP XVII)
Año del Documento: 2018
Editorial: Springer
Documento Fuente: Journal of Electronic Materials, 2018, Volume 47, Issue 9, pp 5061–5067
Resumen: The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process, in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS does not reveal significant changes, within the error margin, with respect to the as-grown sample. The in situ annealed in the As overpressure sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission.
Palabras Clave: Dilute nitrides, GaNSbAs, solar cells, cathodoluminescence, annealing
DOI: https://doi.org/10.1007/s11664-018-6325-3
Patrocinador: Spanish Government (MINECO Project ENE2014- 56069-C4-4-R) and Junta de Castilla y Leo´n (VA293U13 and VA081U16 Projects). The Ministry of Economy and Competitiveness MINECO supports this work through Projects TEC2014-54260- C3-1-P, TEC2014-54260-C3-2-P, TEC2014-54260- C3-3-P, PCIN-2015-181-C02-01 and PCIN-2015- 181-C02-02.
Version del Editor: https://link.springer.com/article/10.1007/s11664-018-6325-3
Idioma: eng
URI: http://uvadoc.uva.es/handle/10324/31326
Derechos: info:eu-repo/semantics/openAccess
Aparece en las colecciones:DEP32 - Capítulos de monografías

Ficheros en este ítem:
Fichero Descripción TamañoFormato 
Cathodoluminescence-characterization-dilute-Preprint.pdf797,35 kBAdobe PDFThumbnail
Visualizar/Abrir

Este ítem está sujeto a una licencia Creative Commons Licencia Creative Commons Creative Commons

Comentarios
Universidad de Valladolid
Powered by MIT's. DSpace software, Version 5.5
UVa-STIC