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Por favor, use este identificador para citar o enlazar este ítem: http://uvadoc.uva.es/handle/10324/31333
Título: Defect characterization of UMG mc-Si solar cells using LBIC and luminescence imaging techniques
Autor: Sánchez, L.A.
Moretón Fernández, Ángel
Guada, M.
Rodríguez Conde, S.
Martínez Sacristán, Óscar
Jiménez López, Juan
Año del Documento: 2018
Editorial: Materials Research Society
Documento Fuente: MRS Advances, 2018, Volume 3, Issue 57-58 (Electronic and Photonic Materials), pp. 3359-3365
Resumen: Upgraded metallurgical-grade silicon (UMG Si) solar cells with different ranges of efficiencies were characterized through electroluminescence imaging (ELi) and light-beam induced current (LBIC) measurements. The results showed a good correlation between the EL intensity and the efficiency of the solar cells. ELi images gave a bright contrast at the defects, grain boundaries and intragrain defects, and dark contrast inside the grain bodies. Metallic impurities are much more present in some cells due to the directional solidification of the Si ingot. Local short-circuit current mapping with LBIC measurements revealed a bright zone in the neighborhoods of the defects due to the depletion of impurities. Internal quantum efficiencies (IQE) and effective diffusion lengths (Leff) were calculated using different excitation wavelengths. High resolution LBIC measurements revealed micrometric clusters of impurities around intragrain defects
DOI: https://doi.org/10.1557/adv.2018.366
Patrocinador: Spanish MINECO project, ref. ENE2014-56069-C4-4-R and “Junta de Castilla y León (Spain)” project number VA081U16
Version del Editor: https://www.cambridge.org/core/journals/mrs-advances/article/defect-characterization-of-umg-mcsi-solar-cells-using-lbic-and-luminescence-imaging-techniques/013F9765D4373C9FA8A0A29FE3B50F47
Idioma: eng
URI: http://uvadoc.uva.es/handle/10324/31333
Derechos: info:eu-repo/semantics/openAccess
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