Por favor, use este identificador para citar o enlazar este ítem:http://uvadoc.uva.es/handle/10324/21754
Título
Fully porous GaN p-n junctions fabricated by Chemical Vapor Deposition: a green technology towards more efficient LEDs
Autor
Año del Documento
2015
Editorial
Electrochemical Society
Descripción
Producción Científica
Documento Fuente
ECS Transactions, 2015, vol. 66, 163
Resumo
Porous GaN based LEDs produced by corrosion etching techniques
demonstrated enhanced light extraction efficiency in the past.
However, these fabrication techniques require further postgrown
processing steps, which increase the price of the final system. In
this paper, we review the process followed towards the fabrication
of fully porous GaN p-n junctions directly during the growth step,
using a sequential chemical vapor deposition (CVD) process to
produce the different layers that form the p-n junction.
Materias (normalizadas)
LEDs
ISSN
1938-5862
Revisión por pares
SI
Patrocinador
Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13)
Version del Editor
Idioma
eng
Derechos
openAccess
Aparece en las colecciones
Arquivos deste item
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