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Mostrando ítems 11-15 de 35

On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon

Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; Santos Tejido, Iván ; López Martín, Pedro ; Cristiano, Fuccio; La Magna, Antonino; Huet, Karim; Tabata, Toshiyuki; Pelaz Montes, María Lourdes (2018)
Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study

Santos Tejido, Iván ; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; López Martín, Pedro ; Pelaz Montes, María Lourdes (2018)
Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

Aboy Cebrián, María ; Pelaz Montes, María Lourdes ; López Martín, Pedro ; Bruno, Elena; Mirabella, Salvo (2010)
Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

Santos Tejido, Iván ; Castrillo, P.; Windl, W.; Drabold, D. A.; Pelaz Montes, María Lourdes ; Marqués Cuesta, Luis Alberto (2010)
Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm

Pelaz Montes, María Lourdes ; Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; Santos Tejido, Iván ; López Martín, Pedro ; Duffy, Ray (2010)