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Mostrando ítems 11-15 de 33

Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

Aboy Cebrián, María ; Pelaz Montes, María Lourdes ; López Martín, Pedro ; Bruno, Elena; Mirabella, Salvo (2010)
Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

Santos Tejido, Iván ; Castrillo, P.; Windl, W.; Drabold, D. A.; Pelaz Montes, María Lourdes ; Marqués Cuesta, Luis Alberto (2010)
Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm

Pelaz Montes, María Lourdes ; Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; Santos Tejido, Iván ; López Martín, Pedro ; Duffy, Ray (2010)
Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing

Santos Tejido, Iván ; Pelaz Montes, María Lourdes ; Marqués Cuesta, Luis Alberto ; Colombo, Luciano (2011)
The curious case of thin-body Ge crystallization

Duffy, Ray; Shayesteh, M.; McCarthy, B.; Blake, A.; White, M.; Scully, J.; Yu, R.; Kelleher, A. M.; Schmidt, M.; Petkov, N.; Pelaz Montes, María Lourdes ; Marqués Cuesta, Luis Alberto (2011)