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Título
Ultrafast generation of unconventional {001} loops in Si
Autor
Año del Documento
2017
Editorial
American Physical Society
Descripción
Producción Científica
Documento Fuente
Physical Review Letters Vol. 119, Iss. 20, 2017
Resumen
Ultra-fast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquid-like droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond timescale.
Palabras Clave
Laser annealing
Molecular dynamics
Láser
Dinámica molecular
ISSN
0031-9007
Revisión por pares
SI
Patrocinador
Ministerio de Economía, Industria y Competitividad - FEDER (Proyect TEC2014-60694-P)
Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA331U14)
CNR and CNRS “Understanding and Modeling of Excimer Laser Annealing” (UMEX)
Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA331U14)
CNR and CNRS “Understanding and Modeling of Excimer Laser Annealing” (UMEX)
Version del Editor
Idioma
eng
Derechos
openAccess
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Ficheros en el ítem
Tamaño:
2.905Mb
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Adobe PDF
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