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Please use this identifier to cite or link to this item: http://uvadoc.uva.es/handle/10324/28070
Title: Ultrafast generation of unconventional {001} loops in Si
Authors: Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
Santos Tejido, Iván
López Martín, Pedro
Cristiano, Fuccio
La Magna, Antonino
Huet, Karim
Tabata, Toshiyuki
Pelaz Montes, María Lourdes
Issue Date: 2017
Publisher: American Physical Society
Description: Producción Científica
Citation: Physical Review Letters Vol. 119, Iss. 20, 2017
Abstract: Ultra-fast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquid-like droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond timescale.
Classification: Laser annealing
Molecular dynamics
Láser
Dinámica molecular
ISSN: 0031-9007
Peer Review: SI
DOI: https://doi.org/10.1103/PhysRevLett.119.205503
Sponsor: Ministerio de Economía, Industria y Competitividad - FEDER (Proyect TEC2014-60694-P)
Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA331U14)
CNR and CNRS “Understanding and Modeling of Excimer Laser Annealing” (UMEX)
Publisher Version: https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.119.205503
Language: eng
URI: http://uvadoc.uva.es/handle/10324/28070
Rights: info:eu-repo/semantics/openAccess
Appears in Collections:Electrónica - Artículos de revista
DEP22 - Artículos de revista

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