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Título
Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells
Autor
Serie
Topical Collection: 17th Conference on Defects (DRIP XVII)
Año del Documento
2018
Editorial
Springer
Documento Fuente
Journal of Electronic Materials, 2018, Volume 47, Issue 9, pp 5077–5082
Resumo
Today’s photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other
hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electrical activity of defects in mc-Si solar cells. In this work, upgraded metallurgical grade Si solar cells are studied using these two techniques.
Palabras Clave
Solar cells multicrystalline silicon
UMG silicon
LBIC
ISSN
0361-5235
Patrocinador
Ministerio de Economía, Industria y Competitividad (ENE2014-56069-C4-4-R)
Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. Project VA081U16)
Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. Project VA081U16)
Version del Editor
Idioma
eng
Derechos
openAccess
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