• español
  • English
  • français
  • Deutsch
  • português (Brasil)
  • italiano
    • español
    • English
    • français
    • Deutsch
    • português (Brasil)
    • italiano
    • español
    • English
    • français
    • Deutsch
    • português (Brasil)
    • italiano
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Listar

    Todo UVaDOCComunidadesPor fecha de publicaciónAutoresMateriasTítulos

    Mi cuenta

    Acceder

    Estadísticas

    Ver Estadísticas de uso

    Compartir

    Ver ítem 
    •   UVaDOC Principal
    • PRODUCCIÓN CIENTÍFICA
    • Departamentos
    • Dpto. Electricidad y Electrónica
    • DEP22 - Artículos de revista
    • Ver ítem
    •   UVaDOC Principal
    • PRODUCCIÓN CIENTÍFICA
    • Departamentos
    • Dpto. Electricidad y Electrónica
    • DEP22 - Artículos de revista
    • Ver ítem
    • español
    • English
    • français
    • Deutsch
    • português (Brasil)
    • italiano

    Exportar

    RISMendeleyRefworksZotero
    • edm
    • marc
    • xoai
    • qdc
    • ore
    • ese
    • dim
    • uketd_dc
    • oai_dc
    • etdms
    • rdf
    • mods
    • mets
    • didl
    • premis

    Citas

    Por favor, use este identificador para citar o enlazar este ítem:http://uvadoc.uva.es/handle/10324/31961

    Título
    Kinetics of large B clusters in crystalline and preamorphized silicon
    Autor
    Aboy Cebrián, MaríaAutoridad UVA Orcid
    Pelaz Montes, María LourdesAutoridad UVA Orcid
    Bruno, Elena
    Mirabella, Salvo
    Boninelli, Simona
    Año del Documento
    2011
    Editorial
    AIP Publishing
    Descripción
    Producción Científica
    Documento Fuente
    Journal of Applied Physics 110, 073524 (2011)
    Resumen
    We present an extended model for B clustering in crystalline or in preamorphized Si and with validity under conditions below and above the equilibrium solid solubility limit of B in Si. This model includes boron-interstitial clusters (BICs) with BnIm configurations—complexes with n B atoms and m Si interstitials—larger (n > 4), and eventually more stable, than those included in previous models. In crystalline Si, the formation and dissolution pathways into large BICs configurations require high B concentration and depend on the flux of Si interstitials. In the presence of high Si interstitial flux, large BICs with a relatively large number of interstitials (m ≥ n) are formed, dissolving under relatively low thermal budgets. On the contrary, for low Si interstitial flux large BICs with few interstitials (m ≪ n) can form, which are more stable than small BICs, and whose complete dissolution requires very intense thermal budgets. We have also investigated the kinetics of large BICs in preamorphized Si, both experimentally and theoretically. B was implanted at a high-dose into preamorphized Si, and the B precipitation was studied by transmission electron microscopy and by sheet resistance and Hall measurement techniques. A simplified model for B clustering and redistribution in amorphous Si is proposed, including the experimental value for the B diffusivity in amorphous Si and the energetics of BICs. Our model suggests that B2, B3I, B4I and B4I2 clusters are the most energetically favored configurations, with relative abundance depending on B concentration. After recrystallization, thermal anneals up to 1100 °C evidence that BICs evolve under very low flux of Si interstitials under the particular experimental conditions considered. Simulations indicate that for very high B concentrations and low Si interstitial flux a significant fraction of the initial small BICs evolves into larger and very stable BIC configurations that survive even after intense thermal budgets, as confirmed by energy filtered transmission electron microscopy analyses. The correlation between simulations and Hall measurements on these samples suggest that hole mobility is significantly degraded by the presence of a high concentration of BICs.
    Palabras Clave
    Silicio cristalino
    crystalline silicon
    ISSN
    0021-8979
    Revisión por pares
    SI
    DOI
    10.1063/1.3639280
    Patrocinador
    Ministerio de Economía, Industria y Competitividad (Project TEC2008-06069)
    Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA011A09)
    Version del Editor
    https://aip.scitation.org/doi/10.1063/1.3639280
    Propietario de los Derechos
    © 2011 American Institute of Physics
    Idioma
    eng
    URI
    http://uvadoc.uva.es/handle/10324/31961
    Derechos
    openAccess
    Aparece en las colecciones
    • DEP22 - Artículos de revista [65]
    • Electrónica - Artículos de revista [33]
    Mostrar el registro completo del ítem
    Ficheros en el ítem
    Nombre:
    2011_Aboy_JAP_110.pdf
    Tamaño:
    3.187Mb
    Formato:
    Adobe PDF
    Thumbnail
    Visualizar/Abrir
    Attribution-NonCommercial-NoDerivatives 4.0 InternationalLa licencia del ítem se describe como Attribution-NonCommercial-NoDerivatives 4.0 International

    Universidad de Valladolid

    Powered by MIT's. DSpace software, Version 5.10