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Título
Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
Autor
Año del Documento
2010
Editorial
American Vacuum Society
Descripción
Producción Científica
Documento Fuente
Journal of Vacuum Science & Technology B, 2010, 28, C1A1-C1A6
Abstract
Ion implantation continues being the dominant technique to introduce dopants in Si devices. With the device feature size in the nanometer scale, the accurate and detailed description of as-implanted dopant and damage profiles is becoming key as advanced annealing techniques are almost diffusionless. The demanding requirements for ultrashallow junction formation are stimulating the development of improved and detailed models for molecular implants and for the kinetics of amorphous damage. Additional challenges arise in the doping of advanced architectures, such as fin field effect transistors, because the introduction of highly tilted ions is quite inefficient and, in addition, the regrowth of amorphous regions in narrow structures is hampered by the slow regrowth at free interfaces and {111} planes. Atomistic simulations play a relevant role to provide the understanding for the development of simplified physically based models computationally more efficient.
Palabras Clave
Implantación de iones
Ion implantation
ISSN
2166-2746
Revisión por pares
SI
Patrocinador
Ministerio de Economía, Industria y Competitividad (Project TEC2008-06069)
Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA011A09)
Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA011A09)
Version del Editor
Propietario de los Derechos
© 2010 American Vacuum Society
Idioma
eng
Derechos
openAccess
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