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Título: Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
Autor: Pelaz Montes, María Lourdes
Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
Santos Tejido, Iván
López Martín, Pedro
Duffy, Ray
Año del Documento: 2010
Editorial: American Vacuum Society
Descripción: Producción Científica
Documento Fuente: Journal of Vacuum Science & Technology B, 2010, 28, C1A1-C1A6
Resumen: Ion implantation continues being the dominant technique to introduce dopants in Si devices. With the device feature size in the nanometer scale, the accurate and detailed description of as-implanted dopant and damage profiles is becoming key as advanced annealing techniques are almost diffusionless. The demanding requirements for ultrashallow junction formation are stimulating the development of improved and detailed models for molecular implants and for the kinetics of amorphous damage. Additional challenges arise in the doping of advanced architectures, such as fin field effect transistors, because the introduction of highly tilted ions is quite inefficient and, in addition, the regrowth of amorphous regions in narrow structures is hampered by the slow regrowth at free interfaces and {111} planes. Atomistic simulations play a relevant role to provide the understanding for the development of simplified physically based models computationally more efficient.
Palabras Clave: Implantación de iones
Ion implantation
ISSN: 2166-2746
Revisión por Pares: SI
Patrocinador: Ministerio de Economía, Industria y Competitividad (Project TEC2008-06069)
Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA011A09)
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Propietario de los Derechos: © 2010 American Vacuum Society
Idioma: eng
Derechos: info:eu-repo/semantics/openAccess
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