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Author Castán Lanaspa, María Helena (2)

Domínguez, Leidy Azucena (2)

Dueñas Carazo, Salvador (2)

García García, Héctor (2)González Ossorio, Óscar (2)... View More Date Issued

2018 (2)

Formato application/pdf (2)... View More

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SCIENTIFIC PRODUCTION
Grupos de Investigación
Grupo de Caracterización de Materiales y Dispositivos Electrónicos (GCME)
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UVaDOC Home
SCIENTIFIC PRODUCTION
Grupos de Investigación
Grupo de Caracterización de Materiales y Dispositivos Electrónicos (GCME)
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The role of defects in the resistive switching behavior of Ta2O5-TiO2-based metal–insulator–metal (MIM) devices for memory applications

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Seemen, Helina; Tamm, Aile; Kukli, Kaupo; Aarik, J. (2018)

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Sahelices Fernández, Benjamín

; Miranda, E.; Bargalló González, Mireia; Campabadal Segura, Francesca (2018)

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Universidad de Valladolid

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