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Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

García García, Héctor ; Vinuesa Sanz, Guillermo; González Ossorio, Óscar ; Sahelices Fernández, Benjamín ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

González Ossorio, Óscar ; Vinuesa Sanz, Guillermo; García García, Héctor ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna; Kukli, Kaupo (2021)
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Vinuesa Sanz, Guillermo; González Ossorio, Óscar ; García García, Héctor ; Sahelices Fernández, Benjamín ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Kukli, Kaupo; Kull, M; Tarre, A; Jõgiaas, Taivo; Tamm, Aile; Kasikov, Aarne (2021)
Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications

Vinuesa Sanz, Guillermo; Marín, Pelayo; González Ossorio, Óscar ; Sahelices Fernández, Benjamín ; García García, Héctor ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador (2021)
Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications

González Ossorio, Óscar ; Vinuesa Sanz, Guillermo; García García, Héctor ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Pérez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Wenger, Christian (2021)