Navegação GCME - Comunicaciones a congresos, conferencias, etc. por data do documento "2017"

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A physically based model to describe resistive switching in different RRAM technologies

González-Cordero, G.; González, M.B.; García García, Héctor ; Campabadal Segura, Francesca; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Jiménez-Molinos, F.; Roldán, J.B. (2017)
Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; González Ossorio, Óscar ; Domínguez, Leidy Azucena; García García, Héctor ; Kalam, Kristjan; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku (2017)
Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures

García García, Héctor ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; González, M.B.; Acero, M.C.; Campabadal Segura, Francesca (2017)