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    Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/65896

    Título
    Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures
    Autor
    García García, HéctorAutoridad UVA Orcid
    Castán Lanaspa, María HelenaAutoridad UVA Orcid
    Dueñas Carazo, SalvadorAutoridad UVA Orcid
    González, M.B.
    Acero, M.C.
    Campabadal, F.
    Congreso
    2017 Spanish Conference on Electron Devices (CDE)
    Año del Documento
    2017
    Editorial
    Institute of Electrical and Electronics Engineers
    Descripción Física
    5 p.
    Descripción
    Producción Científica
    Documento Fuente
    2017 Spanish Conference on Electron Devices (CDE), Barcelona, Spain, 2017, p. 1-4
    Resumo
    The electrical properties of Al 2 O 3 -based metal-insulator-semiconductor capacitors have been investigated. Three different metal gate electrodes were used: two mid-gap metals (TiN and tungsten) and aluminum, a metal with a work function close to the silicon electron affinity. Aluminum oxide films were grown on p-type silicon substrates by atomic layer deposition using trymethylaluminum and water as aluminum and oxygen precursors, respectively. The use of aluminum as the gate electrode prevents the formation of defects inside the oxide layers that could trap charge as has been found for W and TiN gate electrodes using C-V curves and flat band voltage transients. The use of TiN or W as gate electrodes increases the interfacial trap density. However, the leakage current, that follows a Fowler-Nordheim behavior, is low when using TiN electrodes due to a higher cathode barrier height.
    Palabras Clave
    Temperature measurement
    Electrodes
    Logic gates
    Tin
    Transient analysis
    Semiconductor device measurement
    high-k dielectrics
    metal gates
    atomic layer deposition
    MIS capacitors
    electrical characterization
    ISBN
    978-1-5090-5072-7
    DOI
    10.1109/CDE.2017.7905235
    Patrocinador
    This study has been supported by the Spanish TEC2014 under Grant Nos. 52152-C3-3-R, 52152-C3-1-R and 54906- JIN
    Version del Editor
    https://ieeexplore.ieee.org/document/7905235/metrics#metrics
    Idioma
    spa
    URI
    https://uvadoc.uva.es/handle/10324/65896
    Tipo de versión
    info:eu-repo/semantics/publishedVersion
    Derechos
    openAccess
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    • GCME - Comunicaciones a congresos, conferencias, etc. [12]
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    Nombre:
    Advanced_electrical_characterization_of_atomic_layer_deposited_Al2O3_MIS-based_structures.pdf
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    Universidad de Valladolid

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