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dc.contributor.authorDueñas Carazo, Salvador 
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorGonzález Ossorio, Óscar 
dc.contributor.authorDomínguez, Leidy Azucena
dc.contributor.authorGarcía García, Héctor 
dc.contributor.authorKalam, Kristjan
dc.contributor.authorKukli, Kaupo
dc.contributor.authorRitala, Mikko
dc.contributor.authorLeskelä, Markku
dc.date.accessioned2021-01-08T13:23:27Z
dc.date.available2021-01-08T13:23:27Z
dc.date.issued2017
dc.identifier.citation2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS). Barcelona: IEE Xplore, 2017, 4 p.es
dc.identifier.isbn978-1-5386-5108-7es
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/44667
dc.descriptionProducción Científicaes
dc.description.abstractThe resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermediate states between the high and low resistance ones was achieved, demonstrating suitability to analog and neuromorphic applications. Admittance memory cycles provide relevant information about the switching mechanism, in which the existence of two different metallic species in the dielectric seems to play an important role.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherIEEE Xplorees
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subject.classificationResistive memorieses
dc.subject.classificationMomorias resistivases
dc.titleAdmittance memory cycles of Ta2O5-ZrO2-based RRAM deviceses
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.rights.holder© 2017 IEE Xplorees
dc.identifier.doi10.1109/DCIS.2017.8311627es
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/8311627es
dc.title.event2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)es
dc.description.projectSpanish TEC2014 (grant 52152-C3-3-R)es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones


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