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    Por favor, use este identificador para citar o enlazar este ítem:http://uvadoc.uva.es/handle/10324/45398

    Título
    Energy levels of defects created in silicon supersaturated with transition metals
    Autor
    García García, HéctorAutoridad UVA Orcid
    Castán Lanaspa, María HelenaAutoridad UVA Orcid
    García Hemme, E.
    García Hernansaz, R.
    Montero, D.
    González Díaz, G.
    Año del Documento
    2018
    Editorial
    Springer Link
    Descripción
    Producción Científica
    Documento Fuente
    Journal of Electronic Materials, 2018, vol. 47. p. 4993-4997
    Abstract
    Intermediate-band semiconductors have attracted much attention for use in silicon-based solar cells and infrared detectors. In this work, n-Si substrates have been implanted with very high doses (1013 cm−2 and 1014 cm−2) of vanadium, which gives rise to a supersaturated layer inside the semiconductor. However, the Mott limit was not exceeded. The energy levels created in the supersaturated silicon were studied in detail by means of thermal admittance spectroscopy. We found a single deep center at energy near EC − 200 meV. This value agrees with one of the levels found for vanadium in silicon. The capture cross-section values of the deep levels were also calculated, and we found a relationship between the capture cross-section and the energy position of the deep levels which follows the Meyer–Neldel rule. This process usually appears in processes involving multiple excitations. The Meyer–Neldel energy values agree with those previously obtained for silicon supersaturated with titanium and for silicon contaminated with iron.
    Palabras Clave
    Silicon
    Silicio
    Transition metals
    Metales de transición
    ISSN
    0361-5235
    Revisión por pares
    SI
    DOI
    10.1007/s11664-018-6227-4
    Patrocinador
    Ministerio de Economía, Ciencia y Competitividad (projects TEC2014- 52512-C3-3-R and TEC2013-41730-R)
    Comunidad de Madrid (grant 2013/MAE-2780)
    Universidad Complutense de Madrid (grant 910173-2014D)
    Version del Editor
    https://link.springer.com/article/10.1007/s11664-018-6227-4
    Propietario de los Derechos
    © 2018 Springer
    Idioma
    eng
    URI
    http://uvadoc.uva.es/handle/10324/45398
    Tipo de versión
    info:eu-repo/semantics/acceptedVersion
    Derechos
    openAccess
    Collections
    • GCME - Artículos de revista [57]
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    Attribution-NonCommercial-NoDerivatives 4.0 InternacionalExcept where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 Internacional

    Universidad de Valladolid

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