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dc.contributor.authorJimenez, Marta
dc.contributor.authorMoreton, Angel
dc.contributor.authorColina, Juan Manuel
dc.contributor.authorMartínez Sacristán, Óscar 
dc.contributor.authorGonzalez, Miguel Angel
dc.contributor.authorJimenez, Juan
dc.date.accessioned2022-04-19T08:51:58Z
dc.date.available2022-04-19T08:51:58Z
dc.date.issued2019
dc.identifier.citationDefects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIII, Berlín, Alemania, 2019es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/52827
dc.description.abstract- The electrical activity of the extended defects is greatly influenced by the presence of metallic impurities. - The activity of GBs depends on the background metallic impurities, as [M] decreases the GBs loss its electrical activity. - Instead, the sub-grain boundaries present a higher electrical activity, even if [M] is reduced. - The measure of the diffusion length in the presence of high concentrations of metallic impurities can be misleading.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.titleA study of the electrical activity of crystal defects in multicrystalline sies
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.title.eventDefects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIIIes
dc.description.projectMinisterio de Ciencia e Innovación (Proyecto de Investigación ENE2017-89561-C4-3-R)es
dc.description.projectJunta de Castilla y León (Proyecto de Investigación VA283P18)es
dc.type.hasVersioninfo:eu-repo/semantics/draftes


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