A study of the electrical activity of crystal defects in multicrystalline si

Abstract

- The electrical activity of the extended defects is greatly influenced by the presence of metallic impurities. - The activity of GBs depends on the background metallic impurities, as [M] decreases the GBs loss its electrical activity. - Instead, the sub-grain boundaries present a higher electrical activity, even if [M] is reduced. - The measure of the diffusion length in the presence of high concentrations of metallic impurities can be misleading.