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    Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/55603

    Título
    Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study
    Autor
    López Martín, PedroAutoridad UVA Orcid
    Aboy Cebrián, MaríaAutoridad UVA Orcid
    Santos Tejido, IvánAutoridad UVA Orcid
    Marqués Cuesta, Luis AlbertoAutoridad UVA Orcid
    Ullán, Miguel
    Pelaz Montes, María LourdesAutoridad UVA Orcid
    Año del Documento
    2022
    Editorial
    Elsevier
    Descripción
    Producción Científica
    Documento Fuente
    Acta Materialia, 2022, vol. 141, 118375
    Résumé
    The improved radiation hardness of p-type Si detectors is hindered by the radiation-induced acceptor removal process, which is not fully understood yet. Through atomistic modeling of displacement damage and dopant interactions, we analyze the acceptor removal under neutron irradiation, providing physical insight into its microscopic origin. Our results show that the fast decay of the effective dopant concentration (Neff) at low irradiation fluences is due to B deactivation caused by Si self-interstitials. The intriguing increase of the acceptor removal parameter with the initial dopant concentration (Neff,0) is explained by the limited number of mobile Si self-interstitials that survive annihilation and clustering processes. The sublinear dependence of the removal parameter on Neff,0 is associated to the inhomogeneity of damage for low Neff,0 and the formation of B-interstitial clusters with several B atoms for high Neff,0. The presence of O and C modifies B deactivation mechanisms due to the key role of BiO defects and the trapping of vacancies and Si self-interstitials, but for the impurity concentrations analyzed in this work ([O] >> [C]) it has little effect on the overall amount of removed acceptors. At high irradiation fluences, the reported increase of Neff is attributed to the formation of defect-related deep acceptors. From the analysis of the defect concentrations resulting from neutron irradiation and the occupancy of small clusters with acceptor levels reported in literature, we point out the tetra-vacancy cluster as one of the main contributors to Neff with negative space charge.
    Palabras Clave
    Silicon
    Silicio
    Atomistic simulations
    Simulaciones atomísticas
    Irradiation
    Irradiación
    ISSN
    1359-6454
    Revisión por pares
    SI
    DOI
    10.1016/j.actamat.2022.118375
    Patrocinador
    Ministerio de Ciencia, Innovación y Universidades (projects PID2020-115118GB-I00 and PID2019-110189RB-C22)
    Version del Editor
    https://www.sciencedirect.com/science/article/pii/S1359645422007534?via%3Dihub
    Propietario de los Derechos
    © 2022 The Authors
    Idioma
    eng
    URI
    https://uvadoc.uva.es/handle/10324/55603
    Tipo de versión
    info:eu-repo/semantics/publishedVersion
    Derechos
    openAccess
    Aparece en las colecciones
    • Electrónica - Artículos de revista [33]
    • DEP22 - Artículos de revista [65]
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    Microscopic-origin-acceptor-removal.pdf
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    Microscopic-origin-acceptor-removal-supplementary-material.pdf
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    Attribution 3.0 UnportedExcepté là où spécifié autrement, la license de ce document est décrite en tant que Attribution 3.0 Unported

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