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Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
dc.contributor.authorVinuesa, Guillermo
dc.contributor.authorGarcía, Héctor
dc.contributor.authorGonzález, Mireia B.
dc.contributor.authorKalam, Kristjan
dc.contributor.authorZabala, Miguel
dc.contributor.authorTarre, Aivar
dc.contributor.authorKukli, Kaupo
dc.contributor.authorTamm, Aile
dc.contributor.authorCampabadal, Francesca
dc.contributor.authorJiménez, Juan
dc.contributor.authorCastán, Helena
dc.contributor.authorDueñas, Salvador
dc.date.accessioned2024-02-12T08:47:12Z
dc.date.available2024-02-12T08:47:12Z
dc.date.issued2022
dc.identifier.citationElectronics 2022, Resistive Memory Characterization, Simulation, and Compact Modeling: 11(3), 479es
dc.identifier.issn2079-9292es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/66143
dc.descriptionProducción Científicaes
dc.description.abstractIn recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was observed in TiN/Ti/HfO2/Pt structures as the sign of the voltages at which SET and RESET occur depended on the film thickness. A thorough revision of the previous literature on bipolar resistive switching polarity changes is made in order to condense previous knowledge of the subject in a brief and comprehensible way and explain the experimental measurements. The different resistive switching polarities occur in a similar voltage range, which is a new finding when compared to precedent research on the subject. A hypothesis is proposed to explain the change in resistive switching polarity, based on the assumption that polarity change is due to filament disruption occurring at different interfaces.es
dc.format.mimetypeapplication/pdfes
dc.language.isospaes
dc.publisherMDPIes
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/*
dc.subject.classificationresistive switchinges
dc.subject.classificationthickness dependencees
dc.subject.classificationconductive filamentses
dc.subject.classificationRRAMes
dc.subject.classificationpolarity changees
dc.subject.classificationhafnium oxidees
dc.titleEffect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stackses
dc.typeinfo:eu-repo/semantics/articlees
dc.identifier.doi10.3390/electronics11030479es
dc.relation.publisherversionhttps://www.mdpi.com/2079-9292/11/3/479es
dc.identifier.publicationfirstpage479es
dc.identifier.publicationissue3es
dc.identifier.publicationtitleElectronics (Resistive Memory Characterization, Simulation, and Compact Modeling)es
dc.identifier.publicationvolume11es
dc.peerreviewedSIes
dc.description.projectSpanish Ministry of Science, Innovation and Universities and the FEDER program through projects TEC2017-84321-C4-1-R, and TEC2017-84321-C4-2-R. The study was partially supported by European Regional Development Fund project “Emerging orders in quantum and nanomaterials” (TK134), and Estonian Research Agency (PRG753)es
dc.identifier.essn2079-9292es
dc.rightsAtribución-NoComercial-CompartirIgual 4.0 Internacional*
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones


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