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Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
dc.contributor.authorVinuesa Sanz, Guillermo
dc.contributor.authorGarcía, Héctor
dc.contributor.authorGonzález, Mireia B.
dc.contributor.authorKalam, Kristjan
dc.contributor.authorZabala, Miguel
dc.contributor.authorTarre, Aivar
dc.contributor.authorKukli, Kaupo
dc.contributor.authorTamm, Aile
dc.contributor.authorCampabadal, Francesca
dc.contributor.authorJiménez, Juan
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorDueñas Carazo, Salvador 
dc.date.accessioned2024-02-12T08:47:12Z
dc.date.available2024-02-12T08:47:12Z
dc.date.issued2022
dc.identifier.citationElectronics 2022, Resistive Memory Characterization, Simulation, and Compact Modeling: 11(3), 479es
dc.identifier.issn2079-9292es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/66143
dc.descriptionProducción Científicaes
dc.description.abstractIn recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was observed in TiN/Ti/HfO2/Pt structures as the sign of the voltages at which SET and RESET occur depended on the film thickness. A thorough revision of the previous literature on bipolar resistive switching polarity changes is made in order to condense previous knowledge of the subject in a brief and comprehensible way and explain the experimental measurements. The different resistive switching polarities occur in a similar voltage range, which is a new finding when compared to precedent research on the subject. A hypothesis is proposed to explain the change in resistive switching polarity, based on the assumption that polarity change is due to filament disruption occurring at different interfaces.es
dc.format.mimetypeapplication/pdfes
dc.language.isospaes
dc.publisherMDPIes
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/*
dc.subject.classificationresistive switchinges
dc.subject.classificationthickness dependencees
dc.subject.classificationconductive filamentses
dc.subject.classificationRRAMes
dc.subject.classificationpolarity changees
dc.subject.classificationhafnium oxidees
dc.titleEffect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stackses
dc.typeinfo:eu-repo/semantics/articlees
dc.identifier.doi10.3390/electronics11030479es
dc.relation.publisherversionhttps://www.mdpi.com/2079-9292/11/3/479es
dc.identifier.publicationfirstpage479es
dc.identifier.publicationissue3es
dc.identifier.publicationtitleElectronics (Resistive Memory Characterization, Simulation, and Compact Modeling)es
dc.identifier.publicationvolume11es
dc.peerreviewedSIes
dc.description.projectSpanish Ministry of Science, Innovation and Universities and the FEDER program through projects TEC2017-84321-C4-1-R, and TEC2017-84321-C4-2-R. The study was partially supported by European Regional Development Fund project “Emerging orders in quantum and nanomaterials” (TK134), and Estonian Research Agency (PRG753)es
dc.identifier.essn2079-9292es
dc.rightsAtribución-NoComercial-CompartirIgual 4.0 Internacional*
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones


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