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dc.contributor.authorMaldonado, D.
dc.contributor.authorVinuesa Sanz, Guillermo
dc.contributor.authorAldana, S.
dc.contributor.authorAguirre, F.L.
dc.contributor.authorCantudo, A.
dc.contributor.authorGarcía, H.
dc.contributor.authorGonzález, M.B.
dc.contributor.authorJiménez-Molinos, F.
dc.contributor.authorCampabadal, F.
dc.contributor.authorMiranda, E.
dc.contributor.authorDueñas Carazo, Salvador 
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorRoldán, J.B.
dc.date.accessioned2024-02-13T11:04:44Z
dc.date.available2024-02-13T11:04:44Z
dc.date.issued2024
dc.identifier.citationVolume 169, January 2024, 107878es
dc.identifier.issn1369-8001es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/66208
dc.descriptionProducción Científicaes
dc.description.abstractThe switching dynamics of TiN/Ti/HfO2/W-based resistive memories is investigated. The analysis consisted in the systematic application of voltage sweeps with different ramp rates and temperatures. The obtained results give clear insight into the role played by transient and thermal effects on the device operation. Both kinetic Monte Carlo simulations and a compact modeling approach based on the Dynamic Memdiode Model are considered in this work with the aim of assessing, in terms of their respective scopes, the nature of the physical processes that characterize the formation and rupture of the filamentary conducting channel spanning the oxide film. As a result of this study, a better understanding of the different facets of the resistive switching dynamics is achieved. It is shown that the temperature and, mainly, the applied electric field, control the switching mechanism of our devices. The Dynamic Memdiode Model, being a behavioral analytic approach, is shown to be particularly suitable for reproducing the conduction characteristics of our devices using a single set of parameters for the different operation regimes.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherELSEVIERes
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/*
dc.subject.classificationResistive switchinges
dc.subject.classificationRRAMes
dc.subject.classificationOperation dynamicses
dc.subject.classificationCharacterizationes
dc.subject.classificationKinetic Monte Carloes
dc.subject.classificationCompact modelinges
dc.titleA thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memorieses
dc.typeinfo:eu-repo/semantics/articlees
dc.identifier.doi10.1016/j.mssp.2023.107878es
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S1369800123005711?via%3Dihubes
dc.identifier.publicationfirstpage107878es
dc.identifier.publicationtitleMaterials Science in Semiconductor Processinges
dc.identifier.publicationvolume169es
dc.peerreviewedSIes
dc.description.projectSpanish Ministry of Science and Innovation and FEDER program [PID2022-139586NB-C41, PID2022-139586NB-C42, PID2022-139586NB-C43, PID2022-139586NB-C44], the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) [B-TIC-624-UGR20] and the Spanish Consejo Superior de Investigaciones Científicas (CSIC) [20225AT012], with support of FEDER funds. M. B. G. acknowledges the Ramón y Cajal grant number RYC2020-030150-I. E.M and F.A. acknowledge the support from the European project MEMQuD, code 20FUN06, which has received funding from the EMPIR programme co-financed by the Participating States and from the European Union's Horizon 2020 research and innovation programme.es
dc.rightsAtribución-NoComercial-CompartirIgual 4.0 Internacional*
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones


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