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dc.contributor.authorJimenez-Molinos, F.
dc.contributor.authorVinuesa, G.
dc.contributor.authorGarcía, H.
dc.contributor.authorTarre, A.
dc.contributor.authorTamm, A.
dc.contributor.authorKalam, K.
dc.contributor.authorKukli, K.
dc.contributor.authorDueñas Carazo, Salvador 
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorGonzález, M.B.
dc.contributor.authorCampabadal, F.
dc.contributor.authorMaldonado, D.
dc.contributor.authorCantudo, A.
dc.contributor.authorRoldán, J.B.
dc.date.accessioned2024-02-13T15:44:22Z
dc.date.available2024-02-13T15:44:22Z
dc.date.issued2023
dc.identifier.citation2023 14th Spanish Conference on Electron Devices (CDE)es
dc.identifier.isbn979-8-3503-0241-7es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/66235
dc.descriptionProducción Científicaes
dc.description.abstractThe thermal dependence of the resistance in the low resistance state of TiN/Ti/HfO 2 /Pt memristors has been experimentally studied. After modeling the measured I-V curves, the different resistive components (ohmic and non-linear) have been extracted and their thermal behavior estimated. Finally, the intrinsic series resistance linked to the metallic paths, contacts, and the remnants of the filament during resistive switching is also obtained at different temperatures. The results can be employed to propose physically-based models for circuit simulation.es
dc.format.extent4 p.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Xplore)es
dc.rights.accessRightsinfo:eu-repo/semantics/restrictedAccesses
dc.subject.classificationmemristores
dc.subject.classificationthermal dependencees
dc.subject.classificationresistive switchinges
dc.titleThermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristorses
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.identifier.doi10.1109/CDE58627.2023.10339514es
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/10339514/metrics#metricses
dc.title.event2023 14th Spanish Conference on Electron Devices (CDE)es
dc.description.projectProject B-TIC-624-UGR20 funded by the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) and the FEDER program. The study was also supported by the European Regional Development Fund project “Emerging orders in quantum and nanomaterials” (TK134), and the Estonian Research Agency (PRG753). M.B.G acknowledges the Ramón y Cajal grant No. RYC2020-030150-Ies
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones


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