Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

Jimenez-Molinos, F.; Vinuesa Sanz, Guillermo; García García, Héctor; Tarre, A.; Tamm, A.; Kalam, K.; Kukli, K.; Dueñas Carazo, Salvador; Castán Lanaspa, María Helena; González, M.B.; Campabadal, F.; Maldonado, D.; Cantudo, A.; Roldán, J.B.

doi:10.1109/CDE58627.2023.10339514

Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/66235

Título

Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

Congreso

2023 14th Spanish Conference on Electron Devices (CDE)

Año del Documento

2023

Editorial

Institute of Electrical and Electronics Engineers (IEEE Xplore)

Descripción Física

4 p.

Descripción

Producción Científica

Documento Fuente

2023 14th Spanish Conference on Electron Devices (CDE)

Zusammenfassung

The thermal dependence of the resistance in the low resistance state of TiN/Ti/HfO 2 /Pt memristors has been experimentally studied. After modeling the measured I-V curves, the different resistive components (ohmic and non-linear) have been extracted and their thermal behavior estimated. Finally, the intrinsic series resistance linked to the metallic paths, contacts, and the remnants of the filament during resistive switching is also obtained at different temperatures. The results can be employed to propose physically-based models for circuit simulation.

Palabras Clave

memristor

thermal dependence

resistive switching

ISBN

979-8-3503-0241-7

DOI

10.1109/CDE58627.2023.10339514

Patrocinador

Project B-TIC-624-UGR20 funded by the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) and the FEDER program. The study was also supported by the European Regional Development Fund project “Emerging orders in quantum and nanomaterials” (TK134), and the Estonian Research Agency (PRG753). M.B.G acknowledges the Ramón y Cajal grant No. RYC2020-030150-I

Version del Editor

https://ieeexplore.ieee.org/document/10339514/metrics#metrics