Effect of set and reset dynamics on HfO2, Al2O3, and bilayer memristors

Abstract

In this study, resistive switching in three structures with HfO, AlO, and bilayer (HfO + AlO) oxides is studied. Electrical characterization reveals differences in switching dynamics and performance across these configurations, highlighting the impact of oxide composition and structure on device behavior. The time needed to reset is defined and studied in detail, showing an exponential dependence with the applied voltage. Finally, an initial assessment of the effect that the set and reset transient has on the multilevel capabilities of the devices is made.