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dc.contributor.authorGarcía, H.
dc.contributor.authorVinuesa, G.
dc.contributor.authorVal, T.del
dc.contributor.authorKalam, K.
dc.contributor.authorGonzález, M.B.
dc.contributor.authorCampabadal, F.
dc.contributor.authorDueñas, S.
dc.contributor.authorCastán, H.
dc.date.accessioned2026-02-04T09:23:40Z
dc.date.available2026-02-04T09:23:40Z
dc.date.issued2026
dc.identifier.citationSolid-State Electronics, 2026, 231, 109294es
dc.identifier.issn0038-1101es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/82538
dc.descriptionProducción Científicaes
dc.description.abstractMemristors have drawn interest due to their use as artificial synapses in neuromorphic circuits. This work investigates the multilevel conductance modulation in Al2O3 and HfO2-based memristors. Specifically, the control of the depression or reset transition when applying identical consecutive voltage pulses was the main objective. Both pulse amplitude and pulse accumulated time can control the reset transition. Voltage required to reset the device is higher for Al2O3, which can lead to higher energy consumption. However, this material showed better reset transition linearity.es
dc.format.mimetypeapplication/pdfes
dc.language.isospaes
dc.publisherElsevieres
dc.rights.accessRightsinfo:eu-repo/semantics/embargoedAccesses
dc.titleMultilevel conductance modulation in HfO2, Al2O3, and HfO2/Al2O3 bilayer memristorses
dc.typeinfo:eu-repo/semantics/articlees
dc.rights.holderElsevieres
dc.identifier.doi10.1016/j.sse.2025.109294es
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S0038110125002394#ab010es
dc.identifier.publicationfirstpage109294es
dc.identifier.publicationtitleSolid-State Electronicses
dc.identifier.publicationvolume231es
dc.peerreviewedSIes
dc.description.projectPID2022-139586NB-C43 funded by MCIN/AEI/10.13039/501100011033 and by FEDER “A way of making Europe”es
dc.description.projectPID2022-139586NB-C42 funded by MCIN/AEI/10.13039/501100011033 and by ERDF “A way of making Europe”es
dc.description.projectEstonian Research Agency PUTJD1220es
dc.description.projectCSIC funding through project 20225AT012es
dc.description.projectGeneralitat de Catalunya - AGAUR project 2021 SGR 00497es
dc.description.projectProject CR32023040125, funded by MICIU/AEI/10.13039/ 501100011033 and by the NextGeneration EU/PRTR programes
dc.type.hasVersioninfo:eu-repo/semantics/acceptedVersiones


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