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Título
Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures
Autor
Año del Documento
2014
Editorial
Cambridge University Press
Descripción
Producción Científica
Documento Fuente
MRS Proceedings, 2014, Volume 1659, p. 143-148
Résumé
The control of the SiGe NW composition is fundamental for the fabrication of high
quality heterostructures. Raman spectroscopy has been used to analyse the composition
of SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires and
SiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from the
Raman spectrum is explained by the existence of a Ge-rich outer shell and by the
interaction of the NW with the electromagnetic field associated with the laser beam.
Materias (normalizadas)
Raman Spectroscopy
Revisión por pares
SI
Patrocinador
Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13)
Version del Editor
Idioma
eng
Derechos
openAccess
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