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Mostrando ítems 16-20 de 41

Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

Santos Tejido, Iván ; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; López Martín, Pedro ; Ruiz Prieto, Manuel; Pelaz Montes, María Lourdes ; Hernández Díaz, A.M.; Castrillo, P. (2016)
Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique

López Martín, Pedro ; Santos Tejido, Iván ; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; Trochet, M.; Mousseau, N.; Pelaz Montes, María Lourdes (2017)
Characterization of amorphous Si generated through classical molecular dynamics simulations

Santos Tejido, Iván ; López Martín, Pedro ; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; Pelaz Montes, María Lourdes (2017)
Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

Aboy Cebrián, María ; Pelaz Montes, María Lourdes ; López Martín, Pedro ; Bruno, Elena; Mirabella, Salvo (2010)
Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

Santos Tejido, Iván ; Castrillo, P.; Windl, W.; Drabold, D. A.; Pelaz Montes, María Lourdes ; Marqués Cuesta, Luis Alberto (2010)