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Atomistic modeling of laser-related phenomena

Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; López Martín, Pedro ; Santos Tejido, Iván ; Pelaz Montes, María Lourdes ; Fisicaro, Giuseppe (2021)
Achieving junction stability in heavily doped epitaxial Si:P

Tsai, Chun-Hsiung; Hsu, Yu-Hsiang; Santos Tejido, Iván ; Pelaz Montes, María Lourdes ; Kowalski, Jeffrey; Liou, J.W.; Woon, Wei-Yen; Lee, Chih-Kung (2021)
Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential

Martín Encinar, Luis ; Santos Tejido, Iván ; López Martín, Pedro ; Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; Pelaz Montes, María Lourdes (2019)
IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions

López Martín, Pedro ; Aboy Cebrián, María ; Muñoz, I.; Santos Tejido, Iván ; Marqués Cuesta, Luis Alberto ; Couso, Carlos; Ullán, Miguel; Pelaz Montes, María Lourdes (2019)
{001} loops in silicon unraveled

Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; Ruiz Prieto, Manuel; Santos Tejido, Iván ; López Martín, Pedro ; Pelaz Montes, María Lourdes (2019)