Envíos recientes

Anzeige der Dokumente 6-10 von 43

Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

López Martín, Pedro ; Aboy Cebrián, María ; Santos Tejido, Iván ; Marqués Cuesta, Luis Alberto ; Ullán, Miguel; Pelaz Montes, María Lourdes (2022)
Rapid thermal process driven intra-die device variations

Tsai, Chinhao; Aboy Cebrián, María ; Pelaz Montes, María Lourdes ; Hsu, Yu-Hsiang; Woon, Wei-Yen; Timans, Paul J.; Lee, Chih-Kung (2022)
Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit

Tsai, Chun-Hsiung; Savant, Chandrashekhar P.; Asadi, Mohammad Javad; Lin, Yu-Ming; Santos Tejido, Iván ; Hsu, Yu-Hsiang; Kowalski, Jeffrey; Pelaz Montes, María Lourdes ; Woon, Wei-Yen; Lee, Chih-Kung; Hwang, James C. M. (2022)
Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism

Santos Tejido, Iván ; Caballo Zulueta, Ana; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; López Martín, Pedro ; Pelaz Montes, María Lourdes (2022)
Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

López Martín, Pedro ; Aboy Cebrián, María ; Muñoz Velasco, Irene; Santos Tejido, Iván ; Marqués Cuesta, Luis Alberto ; Fernández Martínez, Pablo; Ullán, Miguel; Pelaz Montes, María Lourdes (2022)