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Mostrando ítems 6-10 de 41

Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit

Tsai, Chun-Hsiung; Savant, Chandrashekhar P.; Asadi, Mohammad Javad; Lin, Yu-Ming; Santos Tejido, Iván ; Hsu, Yu-Hsiang; Kowalski, Jeffrey; Pelaz Montes, María Lourdes ; Woon, Wei-Yen; Lee, Chih-Kung; Hwang, James C. M. (2022)
Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism

Santos Tejido, Iván ; Caballo Zulueta, Ana; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; López Martín, Pedro ; Pelaz Montes, María Lourdes (2022)
Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

López Martín, Pedro ; Aboy Cebrián, María ; Muñoz Velasco, Irene; Santos Tejido, Iván ; Marqués Cuesta, Luis Alberto ; Fernández Martínez, Pablo; Ullán, Miguel; Pelaz Montes, María Lourdes (2022)
Atomistic modeling of laser-related phenomena

Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; López Martín, Pedro ; Santos Tejido, Iván ; Pelaz Montes, María Lourdes ; Fisicaro, Giuseppe (2021)
Achieving junction stability in heavily doped epitaxial Si:P

Tsai, Chun-Hsiung; Hsu, Yu-Hsiang; Santos Tejido, Iván ; Pelaz Montes, María Lourdes ; Kowalski, Jeffrey; Liou, J.W.; Woon, Wei-Yen; Lee, Chih-Kung (2021)