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dc.contributor.author | López Martín, Pedro | |
dc.contributor.author | Aboy Cebrián, María | |
dc.contributor.author | Muñoz, I. | |
dc.contributor.author | Santos Tejido, Iván | |
dc.contributor.author | Marqués Cuesta, Luis Alberto | |
dc.contributor.author | Couso, Carlos | |
dc.contributor.author | Ullán, Miguel | |
dc.contributor.author | Pelaz Montes, María Lourdes | |
dc.date.accessioned | 2019-01-10T12:50:41Z | |
dc.date.available | 2019-01-10T12:50:41Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | 2018 Spanish Conference on Electron Devices (CDE). Proceedings, 14-16 Nov. 2018, Salamanca. | es |
dc.identifier.isbn | 978-1-5386-5779-9 | es |
dc.identifier.uri | http://uvadoc.uva.es/handle/10324/33892 | |
dc.description | Producción Científica | es |
dc.description.abstract | Electronic devices operating in harsh radiation environments must withstand high radiation levels with minimal performance degradation. Recent experiments on the radiation hardness of a new vertical p-type JFET power switch have shown a significant reduction of forward drain current under non-ionizing conditions. In this work, atomistic simulations are used to study the impact of irradiation-induced displacement damage on forward characteristics. Damage models have been updated to produce a better description of damage-dopant interactions at RT. Our results show that excess self-interstitials produced by irradiation deactivate a significant amount of B atoms, thus reducing the effective dopant concentration. | es |
dc.format.mimetype | application/pdf | es |
dc.language.iso | eng | es |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE). | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.subject.classification | Degradación de la corriente | es |
dc.subject.classification | Current degradation | es |
dc.subject.classification | Silicio | es |
dc.subject.classification | Silicon | es |
dc.title | IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions | es |
dc.type | info:eu-repo/semantics/conferenceObject | es |
dc.rights.holder | © 2019 IEEE | es |
dc.identifier.doi | https://doi.org/10.1109/CDE.2018.8596953 | es |
dc.identifier.doi | https://doi.org/10.1109/CDE.2018.8596953 | |
dc.relation.publisherversion | https://ieeexplore.ieee.org/document/8596953 | es |
dc.title.event | 2018 Spanish Conference on Electron Devices (CDE) | es |
dc.title.event | Spanish Conference on Electron Devices (CDE 2018) | |
dc.description.project | Ministerio de Ciencia e Innovación (Project TEC2014-60694-P) | es |
dc.description.project | Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA119G18) | es |