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dc.contributor.authorLópez Martín, Pedro 
dc.contributor.authorAboy Cebrián, María 
dc.contributor.authorMuñoz, I.
dc.contributor.authorSantos Tejido, Iván 
dc.contributor.authorMarqués Cuesta, Luis Alberto 
dc.contributor.authorCouso, Carlos
dc.contributor.authorUllán, Miguel
dc.contributor.authorPelaz Montes, María Lourdes 
dc.date.accessioned2019-01-10T12:50:41Z
dc.date.available2019-01-10T12:50:41Z
dc.date.issued2019
dc.identifier.citation2018 Spanish Conference on Electron Devices (CDE). Proceedings, 14-16 Nov. 2018, Salamanca.es
dc.identifier.isbn978-1-5386-5779-9es
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/33892
dc.descriptionProducción Científicaes
dc.description.abstractElectronic devices operating in harsh radiation environments must withstand high radiation levels with minimal performance degradation. Recent experiments on the radiation hardness of a new vertical p-type JFET power switch have shown a significant reduction of forward drain current under non-ionizing conditions. In this work, atomistic simulations are used to study the impact of irradiation-induced displacement damage on forward characteristics. Damage models have been updated to produce a better description of damage-dopant interactions at RT. Our results show that excess self-interstitials produced by irradiation deactivate a significant amount of B atoms, thus reducing the effective dopant concentration.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE).es
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.subject.classificationDegradación de la corrientees
dc.subject.classificationCurrent degradationes
dc.subject.classificationSilicioes
dc.subject.classificationSilicones
dc.titleIONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactionses
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.rights.holder© 2019 IEEEes
dc.identifier.doihttps://doi.org/10.1109/CDE.2018.8596953es
dc.identifier.doihttps://doi.org/10.1109/CDE.2018.8596953
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/8596953es
dc.title.event2018 Spanish Conference on Electron Devices (CDE)es
dc.title.eventSpanish Conference on Electron Devices (CDE 2018)
dc.description.projectMinisterio de Ciencia e Innovación (Project TEC2014-60694-P)es
dc.description.projectJunta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA119G18)es


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