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The role of defects in the resistive switching behavior of Ta2O5-TiO2-based metal–insulator–metal (MIM) devices for memory applications

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Seemen, Helina; Tamm, Aile; Kukli, Kaupo; Aarik, J. (2018)

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Sahelices Fernández, Benjamín

; Miranda, E.; González, M. B.; Campabadal Segura, Francesca (2018)

Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; García García, Héctor

; Kalam, Kristjan; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku (2017)