Buscar

Mostrando ítems 1-4 de 4

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

García García, Héctor

; Vinuesa Sanz, Guillermo

; González Ossorio, Óscar

; Sahelices Fernández, Benjamín

; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)

Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

García García, Héctor

; Boo Alvarez, Jonathan; Vinuesa Sanz, Guillermo

; González Ossorio, Óscar

; Sahelices Fernández, Benjamín

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)

Single and complex devices on three topological configurations of HfO2 based RRAM

González Ossorio, Óscar

; Poblador Cester, Samuel; Vinuesa Sanz, Guillermo

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Maestro Izquierdo, Marcos; Bargalló González, Mireia; Campabadal Segura, Francesca (2020)

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Sahelices Fernández, Benjamín

; Miranda, E.; Bargalló González, Mireia; Campabadal Segura, Francesca (2018)