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Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices

Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; García García, Héctor ; Miranda, E.; González, M.B.; Campabadal, F. (2017)
A physically based model to describe resistive switching in different RRAM technologies

González-Cordero, G.; González, M.B.; García García, Héctor ; Campabadal, F.; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Jiménez-Molinos, F.; Roldán, J.B. (2017)
Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures

García García, Héctor ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; González, M.B.; Acero, M.C.; Campabadal, F. (2017)
Depression classification from tweets using small deep transfer learning Language Models

Rizwan, Muhammad; Mushtaq, Muhammad Faheem; Akram, Urooj; Mehmood, Arif; Ashraf, Imran; Sahelices Fernández, Benjamín (2022)
Structure and electrical behavior of hafnium-praseodymium oxide thin films grown by atomic layer deposition

Kukli, Kaupo; Aarik, Lauri; Vinuesa Sanz, Guillermo ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; García García, Héctor ; Kasikov, Aarne; Ritslaid, Peeter; Piirsoo, Helle-Mai; Aarik, Jaan (2022)