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Mostrando ítems 56-60 de 71

Study of the influence of the dielectric composition of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Kukli, Kaupo; Kemell, Marianna; Ritala, Mikko; Leskelä, Markku (2018)
Memory maps : Reading RRAM devices without power consumption

Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Kukli, Kaupo; Mikkor, Mats; Kalam, Kristjan; Arroval, T.; Tamm, Aile (2018)
Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices

García García, Héctor ; González Ossorio, Óscar ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena (2020)
Single and complex devices on three topological configurations of HfO2 based RRAM

González Ossorio, Óscar ; Poblador Cester, Samuel; Vinuesa Sanz, Guillermo ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Maestro Izquierdo, Marcos; Bargalló González, Mireia; Campabadal Segura, Francesca (2020)
Structure and behavior of ZrO2-graphene-ZrO2 stacks

Kahro, Tauno; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Merisalu, Joonas; Kozlova, Jekaterina; Jõgiaas, Taivo; Piirsoo, Helle-Mai; Kasikov, Aarne; Ritslaid, Peeter; Mändar, Hugo; Tarre, Aivar; Tamm, Aile; Kukli, Kaupo (2020)