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Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition

Kukli, Kaupo; Kemell, Marianna; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Link, Joosep; Stern, Raivo; Heikkilä, Mikko J.; Jõgiaas, Taivo; Kozlova, Jekaterina; Rähn, Mihkel; Mizohata, Kenichiro (2020)
Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films

González Ossorio, Óscar ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Tamm, Aile; Kalam, Kristjan; Seemen, Helina; Kukli, Kaupo (2018)
Current pulses to control the conductance in RRAM devices

García García, Héctor ; Dueñas Carazo, Salvador ; González Ossorio, Óscar ; Castán Lanaspa, María Helena (2020)
Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

Milo, V.; Zambelli, Cristian; Olivo, P.; Pérez, Eduardo; Mahadevaiah, M. K.; González Ossorio, Óscar ; Wenger, Christian; Ielmini, Daniele (2019)
Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; González Ossorio, Óscar ; Domínguez, Leidy Azucena; García García, Héctor ; Kalam, Kristjan; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku (2017)