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dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorDueñas Carazo, Salvador 
dc.contributor.authorKukli, Kaupo
dc.contributor.authorKemell, Marianna
dc.contributor.authorRitala, Mikko
dc.contributor.authorLeskelä, Markku
dc.date.accessioned2021-01-12T08:07:31Z
dc.date.available2021-01-12T08:07:31Z
dc.date.issued2018
dc.identifier.citationECS Transactions, 2018, vol. 85, n. 8. 6 p.es
dc.identifier.issn1938-6737es
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/44919
dc.descriptionProducción Científicaes
dc.description.abstractThe memory behavior of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherIOP Publishinges
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subject.classificationMemory mapses
dc.subject.classificationMapas de memoriaes
dc.titleStudy of the influence of the dielectric composition of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applicationses
dc.typeinfo:eu-repo/semantics/articlees
dc.rights.holder© 2018 IOP Publishinges
dc.identifier.doi10.1149/08508.0143ecstes
dc.relation.publisherversionhttps://iopscience.iop.org/article/10.1149/08508.0143ecstes
dc.peerreviewedSIes
dc.description.projectMinisterio de Economía, Industria y Competitividad (grant TEC2014-52152-C3-3-R)es
dc.description.projectFinnish Centre of Excellence in Atomic Layer Deposition (grant 284623)es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.type.hasVersioninfo:eu-repo/semantics/acceptedVersiones


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