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dc.contributor.authorKukli, Kaupo
dc.contributor.authorKemell, Marianna
dc.contributor.authorHeikkilä, Mikko J
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorDueñas Carazo, Salvador 
dc.contributor.authorMizohata, Kenichiro
dc.contributor.authorRitala, Mikko
dc.contributor.authorLeskelä, Markku
dc.date.accessioned2021-02-01T10:47:23Z
dc.date.available2021-02-01T10:47:23Z
dc.date.issued2020
dc.identifier.citationNanotechnology, 2020, Volume 31, Number 19es
dc.identifier.issn0957-4484es
dc.identifier.urihttp://uvadoc.uva.es/handle/10324/45172
dc.descriptionProducción Científicaes
dc.description.abstractAmorphous SiO2–Nb2O5 nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OC2H5)5, Si2(NHC2H5)6, and O3 to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11–7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current–voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO2:Nb2O5 mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherIOP Publishinges
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subject.classificationDeposición de capa atómicaes
dc.subject.classificationAtomic layer depositiones
dc.titleSilicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilanees
dc.typeinfo:eu-repo/semantics/articlees
dc.rights.holder© 2020 IOP Publishinges
dc.identifier.doi10.1088/1361-6528/ab6fd6es
dc.relation.publisherversionhttps://iopscience.iop.org/article/10.1088/1361-6528/ab6fd6es
dc.identifier.publicationfirstpage195713es
dc.identifier.publicationissue19es
dc.identifier.publicationtitleNanotechnologyes
dc.identifier.publicationvolume31es
dc.peerreviewedSIes
dc.description.projectMinisterio de Economía, Industria y Competitividad, FEDER program (TEC2017-84321-C4-2-R)es
dc.identifier.essn1361-6528es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.type.hasVersioninfo:eu-repo/semantics/acceptedVersiones
dc.subject.unesco2202 Electromagnetismoes


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