A cathodoluminescence study on the diffusion length in InGaAlP/InGaP/GaAs heterostructures

Abstract

- Carrier recombination is critical for the operation of many devices, e.g. solar cells, light emitting diodes, and laser diodes. - The diffusion length depends on the band structure of the material, the crystal quality, alloy scattering, doping, and the presence of defects