A physically based model for resistive memories including a detailed temperature and variability description

Abstract

A new model to account for variability in resistive memories is presented. It is included in a previous general current model that considers the main physical mechanisms involved in the conductive filament formation and disruption processes that lead to different resistive states. The validity of the model has been proved for different technologies of metal-insulator-metal bipolar resistive memories. The model can be implemented in Verilog-A for circuit simulation purposes.